Behavioral Modelling
Unlock precise nonlinear transistor behavior representation with our Cardiff Model portfolio. Improve accuracy across a wide impedance space effortlessly.

Features & Benefits
Non-linear measurement data is often used
to create a behavioral model for high frequency components. Formulations of
these models have been defined in terms of traveling waves, with a desire to
represent nonlinear behavior of high frequency transistors through a direct
extension from linear s-parameters.
The Mesuro model portfolio is comprised of
two variations of a behavioral model – each targeted at a particular end use –
Cardiff Model Lite (CML), where the desired output is a local model, and
Cardiff Model+ (CM+), which incorporates higher order mixing terms allowing a
single model to fit over a range of impedance space.
The Cardiff Model+ formulation has a number
of unique benefits over alternative approaches where formulations are
truncated. Once the formulation is extended, the model moves away from a local
model, where multiple models are required to define an impedance space (i.e.
load lookup), to a model that has a set of coefficients that describes the
behavior of a device over an entire impedance space. This dramatically reduces
file size and also allows any interpolation to be defined by the model itself
rather than relying upon the interpolation algorithm in the simulator. Also, as
harmonic superposition is not assumed in the CM+ formulation, a full harmonic
mixing model is uncovered describing harmonic interactions and improving model
accuracy particularly for complex modes of operation.
For more information on the
Behavioral Model, Click Here!
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